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NTE312 JFET N-Channel VHF Amp/Mix Transistor

Availability: Out of stock

£1.69

The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications.

The NTE312 comes in a TO−92 package.
Features:

  •  High Power Gain: 10dB Min at 400MHz
  •  High Transconductance: 4000 mho Min at 400MHz
  •  Low Crss: 1pF Max
  •  High (Yfs) / Ciss Ratio (High−Frequency Figure−of−Merit)
  •  Drain and Gate Leads Separated for High Maximum Stable Gain
  •  Cross−Modulation Minimized by Square−Law Transfer Characteristic
  •  For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
  • Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
  • Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
  • Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V
  • Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
  • Total Device Dissipation (TA = +25C ), PD .. . . . . . . . . . . . . . . . . . . . . . . . . 360mW
  • Total Device Dissipation (TC = +25C), PD .. . . . . . . . . . . . . . . . . . . . . . . . . 500mW

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